Nanotechnology 2012, 23:035201.CrossRef 5. Kim KM, Lee MH, Gun
HK, Song SJ, Seok JY, Yoon JH, Hwang CS: Understanding structure–property relationship of resistive switching oxide thin films using a conical filament model. Appl Phys Lett 2010, 97:162912.CrossRef 6. Kim KM, Song SJ, Kim GH, Seok JY, Lee MH, Yoon JH, Park J, Hwang CS: Collective motion of conducting filaments in Pt/n‐type TiO2/p‐type NiO/Pt stacked resistance switching memory. Adv Funct Mater 2011, 21:1587.CrossRef 7. Sato Y, Kinoshita K, Aoki M, Sugiyama Y: Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model. Appl Phys Lett 2007, 90:033503.CrossRef 8. Wan HJ, Zhou P, Ye L, Lin YY,
Tang TA, Wu HM, Chi MH: In situ observation Crenolanib order of compliance-current overshoot and its effect on resistive switching. IEEE Electron LY3023414 order device Lett 2010, 31:246.CrossRef 9. Gomes MAB, de S Bulhoes LO, de Castro SC, Damiao AJ: The electrochromic process at Nb 2 O 5 electrodes prepared by thermal oxidation of niobium. J Electrochem Soc 1990, 137:3067.CrossRef 10. Bahl MK: ESCA studies of some BMN 673 datasheet niobium compounds. J Phys Chem Sol 1975, 36:485.CrossRef 11. Lee JK, Lee JW, Park J, Chung SW, Roh JS, Hong SJ, Cho IW, Kwon HI, Lee JH: Extraction of trap location and energy from random telegraph noise in amorphous TiOx resistance random access memories. Appl Phys Lett 2011, 98:143502.CrossRef 12. Long S, Cagli C, Ielmini D, Liu M, Suñé J: Reset statistics of NiO-based resistive switching memories. IEEE Electron Device Lett 2011, 32:1570.CrossRef 13. Long S, Cagli C, Ielmini D, Liu M, Suñé J: Analysis and modeling of resistive switching statistics. J Appl Phys 2012, 111:074508.CrossRef 14. Liu Q, Sun J, Lv H, Long S, Yin K, Wan N, Li Y, Sun L, Liu M: Real-time observation on dynamic growth/dissolution
of conductive filaments in oxide-electrolyte-based ReRAM. Adv Mater 1844, 2012:24. 15. Zhou Interleukin-2 receptor P, Yin M, Wan HJ, Lv HB, Tang TA, Lin YY: Role of TaON interface for CuO resistive switching memory based on a combined model. Appl Phys Lett 2009, 94:053510.CrossRef 16. Zhou P, Ye L, Sun QQ, Chen L, Ding SJ, Jiang AQ, Zhang DW: The temperature dependence in nano-resistive switching of HfAlO. IEEE Trans Nanotechnol 2012, 11:1059.CrossRef Competing interest The authors declare that they have no competing interests. Authors’ contributions PZ carried out the sample fabrication and drafted the manuscript. LY carried out the device measurements. QQS, PFW, AQJ, and SJD participated in the manuscript writing and discussion of results. DWZ participated in the design of the study and performed the statistical analysis. All authors read and approved the final manuscript.”
“Background Dye-sensitized solar cells (DSSCs) pioneered by O’Regan and Grätzel have been intensively investigated as a promising photovoltaic cell all over the world [1–5].