The filler and carbon black are 25.6 wt% and 12.0 wt%, respectively.For organic resistance printing, the stencil mask was a stainless steel sheet, which was made using chemical etching techniques. The printing header was a rubber squeegee of type A with a durometer of 70 and a printed angle of 45��. After top electrode and organic resistance fabrication, the film was turned over. A thixotropic material, type EPO 4X282H, with a viscosity of 106cp and a glass transition temperature of 150��C was printed on the top film using a screen stencil mask to form bump structures (iii). The bump structures were formed after being cured at a temperature of 150��C for 45 minutes. Finally, both PI films were aligned and assembled to form a flexible electronics sensor using adhesive (III), type Cemedine Super-X No.

8008 (Cemedine Co., Japan) which was printed on the top of the post surface using screen technology.2.2. Control Frame for Multi-touchingIn general, in array switch elements for multi-touch use without a resistance layer, it is very difficult to correctly identify which elements are really touched. For example, a 2 �� 2 matrix sensor with elements E1 to E4 has only an ON/OFF switch function, with R11, R12, R21, and R22 ignored, as shown in the upper left of Figure 2(a) with a dashed line. If three elements have been touched, e.g. E1, E2, and E3, then E4 will be misread as also being touched because all column and row electrodes are mutually conductive during the column and row scanning processes.

An organic resistance material was printed on the surface of the sensing electrodes and an algorithm matrix and control system scanning were used to solve this problem. The schematic control system for multi-touch switching applications is shown in Figure 2(a). The system frame includes a microcontroller, a parallel buffer IC, op-amps, and an array of flexible electronics sensors. The microcontroller, model ATmega32-16MU, Atmel AVR, has three I/O ports. Port A outputs a serial high/low digital signal to the column electrode lines. Port B first set
For semiconductor materials, the piezoresistive effect was discovered firstly in Ge and Si by Smith in 1954 [1]. In general, the GF in silicon is ~100 and varies with doping concentration, stress direction and crystal orientation. Noticeably, He et al. and Rowe reported that Si nanowires [2, 3] and Al-Si hybrid structures [4] present giant piezoresistances.

Although these homogeneous silicon Dacomitinib based materials or structures have large piezoresistive responses, there are still several problems, such as p-n junction isolation, high temperature instability, etc., influencing their practical applications. The SOI technology can be brought to solve the isolation problem of devices and substrates, but increases the fabrication cost greatly.