This is physically equivalent to different microwave-driven oscillation frequencies for the two electronic subbands. Acknowledgements This work is supported by the MCYT (Spain) under grant MAT2011-24331 and by AZD2171 the ITN grant 234970 (EU). References 1. Mani RG, Smet JH, von Klitzing K, Narayanamurti V, Johnson WB, LY3023414 Umansky V: Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures. Nature (London) 2002,
420:646–650. 2. Zudov MA, Du RR, Pfeiffer LN, West KW: Evidence for a new dissipationless effect in 2D electronic transport. Phys Rev Lett 2003, 90:046807.CrossRef 3. Iñarrea J, Platero G: Theoretical approach to microwave-radiation- induced zero-resistance states in 2D electron systems. Phys Rev Lett 2005, 94:016806.CrossRef 4. Iñarrea J, Platero G: From zero resistance states to absolute negative conductivity in microwave irradiated two-dimensional electron systems. Appl Phys Lett 2006, 89:052109.CrossRef 5. Iñarrea J, Platero G: Polarization immunity of magnetoresistivity find more response under microwave excitation. Phys Rev B 2007, 76:073311.CrossRef
6. Iñarrea J: Hall magnetoresistivity response under microwave excitation revisited. Appl Phys Lett 2007, 90:172118.CrossRef 7. Durst AC, Sachdev S, Read N, Girvin SM: Radiation-induced magnetoresistance oscillations in a 2D electron gas. Phys Rev Lett 2003, 91:086803.CrossRef 8. Lei XL, Liu SY: Radiation-induced magnetoresistance oscillation in a two-dimensional electron gas in Faraday geometry. Phys Rev Lett 2003, 91:226805.CrossRef 9. Rivera PH, Schulz PA: Radiation-induced zero-resistance states: Possible dressed electronic structure effects. Teicoplanin Phys Rev B 2004, 70:075314.CrossRef 10. Mani RG, Smet JH, von Klitzing K, Narayanamurti V, Johnson WB, Umansky V: Demonstration of a 1/4-Cycle phase shift in the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices. Phys Rev Lett 2004, 92:146801.CrossRef 11. Mani RG, Smet JH, von Klitzing
K, Narayanamurti V, Johnson WB, Umansky V: Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin-splitting in high-mobility GaAs/AlGaAs devices. Phys Rev B 2004, 69:193304.CrossRef 12. Mani RG: Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures. Physica E (Amsterdam) 2004, 22:1.CrossRef 13. Mani RG, Johnson WB, Umansky V, Narayanamurti V, K Ploog K: Phase study of oscillatory resistances in microwave-irradiated- and dark-GaAs/AlGaAs devices: indications of an unfamiliar class of the integral quantum Hall effect. Phys Rev B 2009, 79:205320.CrossRef 14. Mani RG, Gerl C, Schmult S, Wegscheider W, Umansky V: Nonlinear growth in the amplitude of radiation-induced magnetoresistance oscillations. PhysRev B 2010, 81:125320. 15. Wiedmann S, Gusev GM, Raichev OE, Bakarov AK, Portal JC: Microwave zero-resistance states in a bilayer electron system. Phys Rev Lett 2010, 105:026804.CrossRef 16.